IndiumV3, Main, Repository, bibRecord, 008111

Towards identification of degradation mechanisms in InGaN laser diodes grown on bulk GaN crystals

Identifieur interne : 008111 ( Main/Repository ); précédent : 008110; suivant : 008112

Towards identification of degradation mechanisms in InGaN laser diodes grown on bulk GaN crystals

Auteurs : RBID : Pascal:06-0284969

Descripteurs français

Pascal (Inist)
- Diode laser, Fiabilité, Densité dislocation, Mouvement défaut cristallin, Vieillissement, Courant impulsionnel, Courant seuil, Dépendance temps, Recombinaison non radiative, Couche active, Défaut ponctuel, Dégradation, Gallium nitrure, Indium nitrure, Semiconducteur III-V, Composé minéral, InGaN, 4255P.
Wicri :
- concept : Composé minéral.

English descriptors

KwdEn :
- Active layer, Aging, Crystal defect motion, Degradation, Dislocation density, Gallium nitrides, III-V semiconductors, Indium nitrides, Inorganic compounds, Laser diodes, Non radiative recombination, Point defects, Pulse current, Reliability, Threshold current, Time dependence.

Abstract

In this work we present a reliability study of low dislocation density InGaN laser diodes fabricated on high-pressure grown GaN monocrystaline substrates. The aging process was performed under pulse current conditions. Degradation of these devices manifests primarily in the increase of the threshold current. Interestingly, the differential efficiency of lasers remains stable at all times. The aging time dependence of the increase of the threshold current precisely follows a square root dependence. These observations suggest that the degradation results from the enhancement of the nonradiative recombination within the device active layers and is related to point defect diffusion.

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Le document en format XML

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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Active layer</term>
<term>Aging</term>
<term>Crystal defect motion</term>
<term>Degradation</term>
<term>Dislocation density</term>
<term>Gallium nitrides</term>
<term>III-V semiconductors</term>
<term>Indium nitrides</term>
<term>Inorganic compounds</term>
<term>Laser diodes</term>
<term>Non radiative recombination</term>
<term>Point defects</term>
<term>Pulse current</term>
<term>Reliability</term>
<term>Threshold current</term>
<term>Time dependence</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Diode laser</term>
<term>Fiabilité</term>
<term>Densité dislocation</term>
<term>Mouvement défaut cristallin</term>
<term>Vieillissement</term>
<term>Courant impulsionnel</term>
<term>Courant seuil</term>
<term>Dépendance temps</term>
<term>Recombinaison non radiative</term>
<term>Couche active</term>
<term>Défaut ponctuel</term>
<term>Dégradation</term>
<term>Gallium nitrure</term>
<term>Indium nitrure</term>
<term>Semiconducteur III-V</term>
<term>Composé minéral</term>
<term>InGaN</term>
<term>4255P</term>
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<keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Composé minéral</term>
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<front><div type="abstract" xml:lang="en">In this work we present a reliability study of low dislocation density InGaN laser diodes fabricated on high-pressure grown GaN monocrystaline substrates. The aging process was performed under pulse current conditions. Degradation of these devices manifests primarily in the increase of the threshold current. Interestingly, the differential efficiency of lasers remains stable at all times. The aging time dependence of the increase of the threshold current precisely follows a square root dependence. These observations suggest that the degradation results from the enhancement of the nonradiative recombination within the device active layers and is related to point defect diffusion.</div>
</front>
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<fA08 i1="01" i2="1" l="ENG"><s1>Towards identification of degradation mechanisms in InGaN laser diodes grown on bulk GaN crystals</s1>
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<fA11 i1="01" i2="1"><s1>MARONA (L.)</s1>
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<fA11 i1="02" i2="1"><s1>RIEMANN (T.)</s1>
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<fA11 i1="03" i2="1"><s1>CHRISTEN (J.)</s1>
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<fA11 i1="04" i2="1"><s1>SWIETLIK (T.)</s1>
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<fA11 i1="05" i2="1"><s1>FRANSSEN (G.)</s1>
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<fA11 i1="07" i2="1"><s1>LESZCZYNSKI (M.)</s1>
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<fA11 i1="08" i2="1"><s1>PRYSTAWKO (P.)</s1>
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<fA11 i1="09" i2="1"><s1>GRZEGORY (I.)</s1>
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<fA11 i1="10" i2="1"><s1>SUSKI (T.)</s1>
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<fA11 i1="11" i2="1"><s1>POROWSKI (S.)</s1>
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<fA11 i1="12" i2="1"><s1>CZERNECKI (R.)</s1>
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<fC02 i1="01" i2="3"><s0>001B40B55P</s0>
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<s5>04</s5>
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<s5>04</s5>
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<s5>05</s5>
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<s5>05</s5>
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<s5>05</s5>
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<s5>06</s5>
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<s5>06</s5>
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<s5>07</s5>
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<fC03 i1="06" i2="X" l="ENG"><s0>Pulse current</s0>
<s5>07</s5>
</fC03>
<fC03 i1="06" i2="X" l="SPA"><s0>Corriente impulsional</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Courant seuil</s0>
<s5>08</s5>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>Threshold current</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="3" l="FRE"><s0>Dépendance temps</s0>
<s5>09</s5>
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<s5>09</s5>
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<fC03 i1="09" i2="X" l="FRE"><s0>Recombinaison non radiative</s0>
<s5>10</s5>
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<fC03 i1="09" i2="X" l="ENG"><s0>Non radiative recombination</s0>
<s5>10</s5>
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<fC03 i1="09" i2="X" l="SPA"><s0>Recombinación no radiativa</s0>
<s5>10</s5>
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<fC03 i1="10" i2="X" l="FRE"><s0>Couche active</s0>
<s5>11</s5>
</fC03>
<fC03 i1="10" i2="X" l="ENG"><s0>Active layer</s0>
<s5>11</s5>
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<fC03 i1="10" i2="X" l="SPA"><s0>Capa activa</s0>
<s5>11</s5>
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<fC03 i1="11" i2="3" l="FRE"><s0>Défaut ponctuel</s0>
<s5>12</s5>
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<fC03 i1="11" i2="3" l="ENG"><s0>Point defects</s0>
<s5>12</s5>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>Dégradation</s0>
<s5>14</s5>
</fC03>
<fC03 i1="12" i2="3" l="ENG"><s0>Degradation</s0>
<s5>14</s5>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>Gallium nitrure</s0>
<s2>NK</s2>
<s5>15</s5>
</fC03>
<fC03 i1="13" i2="3" l="ENG"><s0>Gallium nitrides</s0>
<s2>NK</s2>
<s5>15</s5>
</fC03>
<fC03 i1="14" i2="3" l="FRE"><s0>Indium nitrure</s0>
<s2>NK</s2>
<s5>16</s5>
</fC03>
<fC03 i1="14" i2="3" l="ENG"><s0>Indium nitrides</s0>
<s2>NK</s2>
<s5>16</s5>
</fC03>
<fC03 i1="15" i2="3" l="FRE"><s0>Semiconducteur III-V</s0>
<s5>48</s5>
</fC03>
<fC03 i1="15" i2="3" l="ENG"><s0>III-V semiconductors</s0>
<s5>48</s5>
</fC03>
<fC03 i1="16" i2="3" l="FRE"><s0>Composé minéral</s0>
<s5>49</s5>
</fC03>
<fC03 i1="16" i2="3" l="ENG"><s0>Inorganic compounds</s0>
<s5>49</s5>
</fC03>
<fC03 i1="17" i2="3" l="FRE"><s0>InGaN</s0>
<s4>INC</s4>
<s5>52</s5>
</fC03>
<fC03 i1="18" i2="3" l="FRE"><s0>4255P</s0>
<s4>INC</s4>
<s5>56</s5>
</fC03>
<fN21><s1>184</s1>
</fN21>
</pA>
<pR><fA30 i1="01" i2="1" l="ENG"><s1>International Conference on Nitride Semiconductors (ICN-6)</s1>
<s2>6</s2>
<s3>Bremen DEU</s3>
<s4>2005-08-28</s4>
</fA30>
</pR>
</standard>
</inist>
</record>

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Towards identification of degradation mechanisms in InGaN laser diodes grown on bulk GaN crystals

Towards identification of degradation mechanisms in InGaN laser diodes grown on bulk GaN crystals

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